unisonic technologies co., ltd 15N25 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2013 unisonic technologies co., ltd qw-r502-994.b 15a, 250v n-channel power mosfet ? description the utc 15N25 is an n-channel enhancement mosfet using utc?s advanced technology to provide the customers with perfect r ds(on) , high switching speed, high current capacity and low gate charge. the utc 15N25 is universally applied in low voltage such as automotive, high efficiency switch ing for dc/dc converters and dc motor control, etc. ? features * r ds(on) <0.32 ? @ v gs =10v, i d =7.5a * low gate charge (typical 20nc) * low c rss (typical 25pf) * high switching speed ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 15N25l-tf1-t 15N25g-tf1-t to-220f1 g d s tube note: pin assignment: g: gate d: drain s: source
15N25 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-994.b ? absolute maximum ratings (unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 250 v gate-source voltage v gss 30 v continuous drain current continuous i d 15 a pulsed i dm 60 a single pulsed avalanche current i as 15 a single pulsed avalanche energy e as 340 mj power dissipation p d 83 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 110 c/w junction to case jc 1.5 c/w ? electrical characteristics parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 250 v drain-source leakage current i dss v ds =250v, v gs =0v 1 a gate-source leakage current forward i gss v gs =+30v, v ds =0v +100 na reverse v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2 4 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =7.5a 0.29 0.32 ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1.0mhz 830 1080 pf output capacitance c oss 200 260 pf reverse transfer capacitance c rss 25 33 pf switching parameters total gate charge q g v gs =10v, v dd =50v, i d =1.3a 67 75 nc gate to source charge q gs 15 nc gate to drain charge q gd 18 nc turn-on delay time t d ( on ) v dd =30v, i d =0.5a, r g =25 ? , v gs =10v, r l =30 ? 40 50 ns rise time t r 50 60 ns turn-off delay time t d ( off ) 130 140 ns fall-time t f 50 65 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 15 a maximum body-diode pulsed current i sm 60 a drain-source diode forward voltage v sd i s =15a, v gs =0v 1.5 v
15N25 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-994.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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